power mosfet.
3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
NOTES: 1. OUTLINE CONFORMS TO EIA-481 & EIA-541. 2. CONTROLLING DIMENSION : MILLIMETER.
FEED DIRECTION
330.00
(12.99.
The new Micro8™ package has half the footprint area of the standard SO-8. This makes the Micro8 an ideal device for
ap.
New trench HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design that HEXFET Power MOSFETs are well .
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